SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Author: USAMI TATSUYA
• Format: Patent
• Language: English; Japanese
• Published: 05.10.2017
• Subjects: DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PROBLEM TO BE SOLVED: To reduce the semiconductor device manufacturing step of forming a silicon integrated circuit and an optical waveguide on the same silicon substrate.SOLUTION: An optical waveguide OL for light signals is formed in a semiconductor layer SL on an SOI substrate 10; a heater HT for heating the optical waveguide OL is formed on an oxidation silicone film 11 covering the optical waveguide OL; and wirings M1A and M1B for supplying power are connected to the heater HT at both ends of heater HT. The wirings M1A and M1B are constituted of a laminated film of a bottom barrier metal film 12, an aluminum-copper alloy film 13 served as a main conductive film and a top barrier metal film 14; and the heater HT is integrally constituted with the bottom barrier metal film 12 constituting a part of each of the wirings M1A and M1B.SELECTED DRAWING: Figure 1 【課題】シリコン集積回路と光導波路とを同一シリコン基板に形成する半導体装置の製造工程を短縮する。【解決手段】ＳＯＩ基板１０の半導体層ＳＬには、光信号用の光導波路ＯＬが形成されており、光導波路ＯＬを覆う酸化シリコン膜１１の上部には、光導波路ＯＬを加熱するためのヒータＨＴが形成され、ヒータＨＴの両端には、ヒータＨＴに電源を供給するための配線Ｍ１Ａ、Ｍ１Ｂが接続されている。配線Ｍ１Ａ、Ｍ１Ｂのそれぞれは、ボトムバリアメタル膜１２と、主導電膜であるアルミニウム−銅合金膜１３と、トップバリアメタル膜１４との積層膜で構成されており、ヒータＨＴは、配線Ｍ１Ａ、Ｍ１Ｂのそれぞれの一部を構成するボトムバリアメタル膜１２と一体に構成されている。【選択図】図１