METHOD FOR MANUFACTURING GROUP III NITRIDE CRYSTAL, AND RAMO4 SUBSTRATE

• Main Authors: TASHIRO ISAO, OKAYAMA YOSHIHISA, YOKOYAMA NOBUYUKI, KATAOKA HIDENAO, TAKASU YOSHIFUMI
• Format: Patent
• Language: English; Japanese
• Published: 05.10.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To easily reuse a RAMOsubstrate in the manufacturing of a group III nitride.SOLUTION: The method for manufacturing a group III nitride crystal comprises the steps of: preparing a RAMOsubstrate consisting of a single crystal body represented by the general formula RAMO(in the general formula, R represents one or more trivalent elements selected from a group consisting of Sc, In, Y and lanthanoid elements; A represents one or more trivalent elements selected from a group consisting of Fe(III), Ga and Al; M represents one or more divalent elements selected from a group consisting of Mg, Mn, Fe(II), Co, Cu, Zn and Cd) and having a notch in a side part; growing the group III nitride crystal on the RAMOsubstrate; and cleaving the RAMOsubstrate from the notch used as a starting point.SELECTED DRAWING: Figure 1 【課題】ＩＩＩ族窒化物の製造においてＲＡＭＯ４基板を容易に再利用すること。【解決手段】一般式ＲＡＭＯ４で表される単結晶体（一般式において、Ｒは、Ｓｃ、Ｉｎ、Ｙ、およびランタノイド系元素からなる群から選択される一つまたは複数の三価の元素を表し、Ａは、Ｆｅ（ＩＩＩ）、Ｇａ、およびＡｌからなる群から選択される一つまたは複数の三価の元素を表し、Ｍは、Ｍｇ、Ｍｎ、Ｆｅ（ＩＩ）、Ｃｏ、Ｃｕ、Ｚｎ、およびＣｄからなる群から選択される一つまたは複数の二価の元素を表す）からなり、側部に切り欠きを有するＲＡＭＯ４基板を準備する工程と、前記ＲＡＭＯ４基板上にＩＩＩ族窒化物結晶を成長させる工程と、前記切り欠きを起点に前記ＲＡＭＯ４基板を劈開させる工程と、を有する、ＩＩＩ族窒化物結晶製造方法。【選択図】図１