IMPURITY DIFFUSION AGENT COMPOSITION, AND METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE

• Main Authors: TAKAHASHI MASARU, SAWADA YOSHIHIRO, OHASHI TAKUYA
• Format: Patent
• Language: English; Japanese
• Published: 28.09.2017
• Subjects: ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAININGELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN,SULFUR, SELENIUM OR TELLURIUM; BASIC ELECTRIC ELEMENTS; CHEMISTRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; ORGANIC CHEMISTRY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide: a diffusion agent composition which enables the uniform coating on a substrate surface, including a whole interior surface of each minute cavity and consequently, enables adequate, uniform diffusion of boron into a semiconductor substrate even if the semiconductor substrate targeted for the diffusion of an impurity diffusion component has, in its surface, a three dimensional structure having nano scale minute cavities in its surface; and a method for manufacturing a semiconductor substrate, by use of the diffusion agent composition.SOLUTION: A diffusion agent composition comprises: an impurity diffusion component (A); and a Si compound (B) which can produce a silanol group as a result of its hydrolysis. In the diffusion agent composition, the impurity diffusion component (A) includes a complex compound of a particular structure including boron.SELECTED DRAWING: None 【課題】不純物拡散成分を拡散させる対象の半導体基板が、その表面にナノスケールの微小な空隙を有する三次元構造をその表面に備える場合であっても、微小な空隙の内表面全面を含め均一に塗布でき、それにより半導体基板に良好且つ均一にホウ素を拡散させることができる拡散剤組成物と、当該拡散剤組成物を用いる半導体基板の製造方法とを提供すること。【解決手段】不純物拡散成分（Ａ）と、加水分解によりシラノール基を生成し得るＳｉ化合物（Ｂ）とを含む拡散剤組成物において、不純物拡散成分（Ａ）に特定の構造のホウ素を含む錯体化合物を含有させる。【選択図】なし