THIN FILM DEPOSITION SYSTEM

• Main Authors: KIYOTA JUNYA, UENO MITSURU, SAITO KAZUYA, ARAI MAKOTO, KURATA TAKAOMI
• Format: Patent
• Language: English; Japanese
• Published: 28.09.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a thin film deposition device with low cost and high mass productivity.SOLUTION: A rotation device 21 composed of a turntable is arranged inside a deposition chamber 11, after aligning deposition objects 5a and 5b on an alignment place 16, the deposition objects 5a and 5b aligned to masks 4a and 4b to substrate holders 34a and 34b provided on the rotation device 21 are arranged, and the rotation device 21 is rotated and moved to the deposition place 15. Then, a deposition source 22 is moved while fine particles of a deposition material are released, and a thin film is formed on the deposition objects 5a and 5b on the deposition place 15. At that time, by arranging the deposition objects 5a and 5b which are not deposited on the alignment place 16, position alignment is performed. Thereby, only one device is required for the deposition source 22 and alignment in the film deposition device 10.SELECTED DRAWING: Figure 1 【課題】低コストで量産性の高い薄膜形成装置を提供する。【解決手段】成膜室１１の内部にターンテーブルからなる回転装置２１を配置し、アラインメント場所１６上で成膜対象物５ａ、５ｂのアラインメントを行った後、回転装置２１に設けられた基板ホルダ３４ａ、３４ｂに、マスク４ａ、４ｂとの間のアラインメントがされた成膜対象物５ａ、５ｂを配置し、回転装置２１を回転させて成膜場所１５上に移動させる。次いで、成膜材料の微粒子を放出させながら成膜源２２を移動させ、成膜場所１５上の成膜対象物５ａ、５ｂに薄膜を形成する。このとき、アラインメント場所１６上に未成膜の成膜対象物５ａ、５ｂを配置し、位置合を行うことができる。従って、本薄膜形成装置１０では、成膜源２２と、アラインメントに要する装置とが、一台で済む。【選択図】 図１