ACOUSTIC WAVE DEVICE

• Main Authors: KURIHARA TOMOYUKI, KAKITA NAOKI, HATAYAMA KAZUE, KUROYANAGI TAKUMA, SATO MASAHIRO, SHIMIZU YOHEI, SUZUKI KAZUTAKA
• Format: Patent
• Language: English; Japanese
• Published: 21.09.2017
• Subjects: BASIC ELECTRIC ELEMENTS; BASIC ELECTRONIC CIRCUITRY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To suppress the distortion of a substrate and increase the heat dissipation.SOLUTION: An acoustic wave device includes: a first substrate 10 including a support substrate 10a and a piezoelectric substrate 10b bonded onto an upper surface of the support substrate, and having a first acoustic element on an upper surface of the piezoelectric substrate; an annular metal layer 37 provided in a region which surrounds the first acoustic element and from which the piezoelectric substrate is removed; a second substrate 20 which is provided on an upper surface of the first substrate by flip-chip bonding through a bump 38 and which is provided with a function unit 22 on a lower surface thereof; and a metal member that is provided on an upper surface of the annular metal layer, surrounds the second substrate in a plan view and is not provided between the first substrate and the second substrate, and seals the first acoustic element and the function unit so that the first acoustic element and the function unit are provided through a gap 25.SELECTED DRAWING: Figure 1 【課題】基板の歪を抑制しかつ放熱性を高めること。【解決手段】支持基板１０ａと前記支持基板の上面に接合された圧電基板１０ｂとを有し、前記圧電基板の上面に第１弾性波素子が設けられた第１基板１０と、前記第１弾性波素子を囲み前記圧電基板が除去された領域に設けられた環状金属層３７と、前記第１基板の上面にバンプ３８を介しフリップチップ実装され、下面に機能部２２が設けられた第２基板２０と、前記環状金属層の上面上に設けられ、平面視において前記第２基板を囲みかつ前記第１基板と前記第２基板との間には設けられておらず、前記第１弾性波素子と前記機能部とが空隙２５を介し設けられるように、前記第１弾性波素子と前記機能部とを封止する金属部材と、を具備する弾性波デバイス。【選択図】図１