SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

• Main Authors: KATANO TOMONORI, IMAI FUMIKAZU
• Format: Patent
• Language: English; Japanese
• Published: 21.09.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To form regions of different carrier concentration easily on a semiconductor substrate.SOLUTION: On the surface of a first conductivity type semiconductor substrate 1, doped regions 41, 42 are formed by selectively doping with second conductivity type impurities. Surface of the doped regions 41, 42 is partially coated with a heat insulation film 7, and at least the reminder of the surface of the doped regions 41, 42 is coated with an absorption film 82. Thereafter, the doped regions 41, 42 are heated via the absorption film 82, thus forming more than one doped regions 41, 42 where the second conductivity type impurity regions have the same impurity concentration, and carrier concentrations different from each other.SELECTED DRAWING: Figure 2 【課題】半導体基板上にキャリア濃度が異なる領域を容易に形成できること。【解決手段】第１導電型の半導体基板１の表面に、第２導電型の不純物を選択的にドープしてドープ領域４１，４２を形成し、ドープ領域４１，４２の表面の一部を断熱膜７で被覆し、少なくともドープ領域の表面の残りを吸収膜８２で被覆し、吸収膜８２を介してドープ領域４１，４２を加熱することで、第２導電型の不純物領域が同じ不純物濃度でキャリア濃度が互いに異なる２つ以上のドープ領域４１，４２を形成できる。【選択図】図２