DISTRIBUTION FEEDBACK SEMICONDUCTOR LASER

• Main Authors: TSUMURA AKIRA, SUMINO TSUTOMU, YAMANE OSAMU, SAITO SHINJI
• Format: Patent
• Language: English; Japanese
• Published: 21.09.2017
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES USING STIMULATED EMISSION; ELECTRICITY

PROBLEM TO BE SOLVED: To provide a distribution feedback semiconductor laser that has improved heat dissipation and is able to emit a laser beam of 2 to 100 μm.SOLUTION: A distribution feedback semiconductor laser has a semiconductor laminate body and a first electrode. The semiconductor laminate body includes: a first layer; an active layer provided on the first layer and capable of emitting a laser beam by optical transition between sub-bands; and a second layer provided on the active layer. The semiconductor laminate body has a first face including: a flat part including the surface of the second layer; and a groove part reaching to the first layer from the surface. The flat part has: a first area extending along a first straight line; and a second area extending orthogonal to the first straight line. The groove part and the second area compose diffraction grating having predetermined pitches along the first straight line on the outside of the first area. The first electrode is provided in the first area.SELECTED DRAWING: Figure 1 【課題】放熱性が高められ、２〜１００μｍ波長のレーザ光を放出可能な分布帰還型半導体レーザを提供する。【解決手段】分布帰還型半導体レーザは、半導体積層体と、第１の電極と、を有する。前記半導体積層体は、第１の層と、前記第１の層の上に設けられサブバンド間光学遷移によりレーザ光を放出可能な活性層と、前記活性層の上に設けられた第２の層と、を含む。前記半導体積層体は、前記第２の層の表面を含む平坦部と前記表面から前記第１の層に到達する溝部とを含む第１の面を有し、前記平坦部は第１の直線に沿って延在する第１領域と前記第１の直線に直交するように延在する第２領域とを有し、前記溝部と前記第２領域とは前記第１領域の外側において前記第１の直線に沿った所定のピッチを有する回折格子を構成する。前記第１の電極は、前記第１領域に設けられる。【選択図】図１