NONVOLATILE RAM AND SYSTEM INCLUDING NONVOLATILE RAM

PROBLEM TO BE SOLVED: To provide a nonvolatile RAM with high speed and high rewrite resistance.SOLUTION: A nonvolatile RAM in an embodiment includes: a memory cell array 22; first access circuits 17-0 to 21-0 each of which is accessible to the memory cell array 22 when writing; and second access cir...

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Bibliographic Details
Main Authors IKEGAMI KAZUTAKA, NOGUCHI HIROKI
Format Patent
LanguageEnglish
Japanese
Published 21.09.2017
Subjects
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Summary:PROBLEM TO BE SOLVED: To provide a nonvolatile RAM with high speed and high rewrite resistance.SOLUTION: A nonvolatile RAM in an embodiment includes: a memory cell array 22; first access circuits 17-0 to 21-0 each of which is accessible to the memory cell array 22 when writing; and second access circuits 17-1 to 21-1 each of which is accessible to the memory cell array 22 when reading and operable in parallel with the first access circuits 17-0 to 21-0. The pulse width of writing pulse is longer than the pulse width of a read pulse.SELECTED DRAWING: Figure 4 【課題】高速かつ高い書き換え耐性の不揮発性ＲＡＭを提案する。【解決手段】実施形態に係わる不揮発性ＲＡＭは、メモリセルアレイ22と、書き込み時にメモリセルアレイ22をアクセス可能である第１のアクセス回路17-0〜21-0と、読み出し時にメモリセルアレイ22をアクセス可能であり、第１のアクセス回路17-0〜21-0と並列に動作可能な第２のアクセス回路17-1〜21-1と、を備え、書き込みパルスのパルス幅は、読み出しパルスのパルス幅よりも長い。【選択図】図４
Bibliography:Application Number: JP20160052297