PHOTODETECTOR AND SUBJECT DETECTION SYSTEM USING THE SAME

• Main Authors: HONDA HIRONAGA, FUNAKI HIDEYUKI, SUZUKI KAZUHIRO, ISHII KOICHI, UENO RISAKO
• Format: Patent
• Language: English; Japanese
• Published: 14.09.2017
• Subjects: ANALOGOUS ARRANGEMENTS USING OTHER WAVES; BASIC ELECTRIC ELEMENTS; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION ORRERADIATION OF RADIO WAVES; MEASURING; PHYSICS; RADIO DIRECTION-FINDING; RADIO NAVIGATION; SEMICONDUCTOR DEVICES; TESTING

PROBLEM TO BE SOLVED: To provide a photodetector capable of improving sensitivity to the light in a near-infrared region by simple configuration, and to provide a subject detection system using the same.SOLUTION: A photodetector 1 includes a first conductivity type semiconductor substrate 10 having a first region, and a second region adjoining the first region, a second conductivity type first semiconductor layer 21 placed in the first region, a first conductivity type second semiconductor layer 23 placed between the first semiconductor layer 21 and semiconductor substrate 10, and bonded to the first semiconductor layer 21, a first conductivity type third semiconductor layer 25 placed on the semiconductor substrate 10 while spaced apart from the second semiconductor layer 23, at least one photodetection cell 20ij (i, j=1, 2, 3) including a first electrode 27a for applying a voltage to the first semiconductor layer 21, and a second electrode 27b for applying a voltage to the third semiconductor layer 25, and an optical guide 40 placed in the second region, and guiding incident light in a first direction parallel with the surface of the semiconductor substrate 10, to a junction of the first semiconductor layer 21 and second semiconductor layer 23.SELECTED DRAWING: Figure 1 【課題】簡易な構成で近赤外領域の光に対する感度を向上させることができる、光検出器およびこれを用いた被写体検知システムを提供する。【解決手段】光検出器１は、第１領域と、第１領域に隣接する第２領域とを有する第１導電型の半導体基板１０と、第１領域に配置された第２導電型の第１半導体層２１と、第１半導体層２１と半導体基板１０との間に配置され第１半導体層２１に接合する第１導電型の第２半導体層２３と、第２半導体層２３と離間して半導体基板１０に配置された第１導電型の第３半導体層２５と、第１半導体層２１に電圧を印加する第１電極２７ａと、第３半導体層２５に電圧を印加する第２電極２７ｂと、を備えた少なくとも１つの光検出セル２０ｉｊ（ｉ，ｊ＝１，２，３）と、第２領域に配置され、入射光を半導体基板１０の表面に平行な第１方向に第１半導体層１０と第２半導体層２１との接合部に導く光ガイド部４０と、を備えている。【選択図】図１