MPS DIODE

• Main Authors: NIWA SHIGEKI, FUJII TAKAHIRO, OZAKI MASAYOSHI, OKA TORU
• Format: Patent
• Language: English; Japanese
• Published: 07.09.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a technology improving a reverse breakdown voltage and reducing a rising voltage when a forward bias is applied, in an MPS diode.SOLUTION: An MPS diode includes: an N-type first semiconductor layer; a P-type semiconductor region and an N-type semiconductor region alternately arranged on one surface of the first semiconductor layer; and a Schottky electrode which forms a Schottky junction with the N-type semiconductor region and which is in contact with at least a part of the P-type semiconductor region. A region in contact with the first semiconductor layer in the N-type semiconductor region has a lower donor concentration than a region in contact with the N-type semiconductor region in the first semiconductor layer and also has a lower donor concentration than a region in contact with the Schottky electrode in the N-type semiconductor region.SELECTED DRAWING: Figure 1 【課題】逆方向耐圧を向上させ、かつ、順方向バイアス印加時の立ち上がり電圧を低減させる技術を提供する。【解決手段】ＭＰＳダイオードは、Ｎ型の第１半導体層と、前記第１半導体層の一方の面に、交互に配置されているＰ型半導体領域及びＮ型半導体領域と、前記Ｎ型半導体領域とショットキー接合し、前記Ｐ型半導体領域の少なくとも一部と接するショットキー電極と、を備え、前記Ｎ型半導体領域の前記第１半導体層と接する領域におけるドナー濃度は、前記第１半導体層の前記Ｎ型半導体領域と接する領域におけるドナー濃度より低く、かつ、前記Ｎ型半導体領域の前記ショットキー電極と接する領域におけるドナー濃度より低い。【選択図】図１