METHOD FOR MANUFACTURING CORE SUBSTRATE FOR WIRING CIRCUIT BOARD, METHOD FOR MANUFACTURING WIRING CIRCUIT BOARD, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Author: IMAYOSHI KOJI
• Format: Patent
• Language: English; Japanese
• Published: 17.08.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS; PRINTED CIRCUITS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide methods for manufacturing a core substrate, a wiring circuit board and a semiconductor device, which are reliable and enable fine wiring formation by precisely controlling the diameter of a through-hole, removing a thermal strain around the through-hole, and increasing the flatness of a surface of a glass substrate when forming the through-hole in the glass substrate.SOLUTION: A method for manufacturing a core substrate comprises the steps of (1) forming a through-hole in a glass substrate, (2) immersing the glass substrate obtained in the step (1) in a hydrogen fluoride-containing etchant to increase the diameter of the through-hole, and (3) forming a through-electrode in the through-hole and a wiring part on a surface of the glass substrate, provided that the through-electrode is electrically connected with the wiring part. Also, methods for manufacturing a wiring circuit board and a semiconductor device are disclosed, in which the core substrate is used.SELECTED DRAWING: Figure 17 【課題】ガラス基板に貫通孔を形成する際に、貫通孔の孔径の精密に制御し、貫通孔周囲の熱歪みを除去し、かつガラス基板の表面の平坦性を向上させることにより、微細配線の形成が可能であり、かつ高い信頼性を有するコア基板、配線回路基板および半導体装置を製造する方法の提供。【解決手段】（１）ガラス基板に貫通孔を形成する工程と、（２）工程（１）で得られたガラス基板をフッ化水素を含むエッチング液に浸漬して、貫通孔の孔径を増大させる工程と、（３）貫通孔の中の貫通電極、および前記ガラス基板の表面の配線部を形成する工程とを含み、貫通電極と前記配線部は電気的に連絡していることコア基板の製造方法。前述のコア基板を用いる配線回路基板および半導体装置の製造方法。【選択図】図１７