SEMICONDUCTOR DEVICE

• Main Author: KOYAMA KAZUHIRO
• Format: Patent
• Language: English; Japanese
• Published: 10.08.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device using a wide gap semiconductor, which achieves reduction in conduction loss while securing reliability of a gate insulation film.SOLUTION: A semiconductor device comprises: a trench-gate vertical MISFET 100 which is formed by using diamond as a wide gap semiconductor and in a cell region in a semiconductor chip; and a gate insulation film 7 composed of a material which creates a barrier to a minority carrier in an n-type body layer 3 and does not create a barrier to a minority carrier in a p-type drift layer 2. The gate insulation film is composed of a material having permittivity greater than that of the wide gap semiconductor.SELECTED DRAWING: Figure 1 【課題】ゲート絶縁膜の信頼性の確保しつつ、導通損失の低減するワイドギャプ半導体を用いた半導体装置を提供する。【解決手段】ワイドギャップ半導体としてダイヤモンドを用いて形成し、半導体チップ中におけるセル領域にトレンチゲート構造の縦型ＭＩＳＦＥＴ１００を形成する。ゲート絶縁膜７を、ｎ型ボディ層３の少数キャリアに対して障壁を持ち、ｐ型ドリフト層２の少数キャリアに対して障壁の無い材料によって構成する。ゲート絶縁膜は、ワイドギャップ半導体よりも誘電率の大きな材料で構成されている。【選択図】図１