THERMOSETTING SHEET FOR HOLLOW SEALING OF SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE HOLLOW-SEALED USING THE SAME

• Main Authors: IWANAGA YUKIHIRO, NAKAMURA YUKI
• Format: Patent
• Language: English; Japanese
• Published: 10.08.2017
• Subjects: ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; ADHESIVES; BASIC ELECTRIC ELEMENTS; CHEMISTRY; DYES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; MISCELLANEOUS APPLICATIONS OF MATERIALS; MISCELLANEOUS COMPOSITIONS; NATURAL RESINS; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; PAINTS; POLISHES; SEMICONDUCTOR DEVICES; USE OF MATERIALS AS ADHESIVES

PROBLEM TO BE SOLVED: To provide a thermosetting sheet for hollow sealing of a semiconductor device, excellent in sealing properties, flux resistance, flux cleaning solution resistance, resistance against sealing material ingress pressure, and reliability, and a semiconductor device hollow-sealed using the same.SOLUTION: A thermosetting sheet for hollow sealing of a semiconductor device includes a thermosetting resin layer and a support layer having one side on which the thermosetting resin layer is formed. The support layer is selected from among glass, or aluminum, copper, stainless steel and an alloy of the metals. The thickness of the thermosetting resin layer is 3-30 μm, the thickness of the support layer is 5-50 μm, and the flow amount after the thermosetting resin layer before thermosetting thereof is pressed at 160°C and 2 MPa for 18 seconds is 100-1,500 μm.SELECTED DRAWING: Figure 4 【課題】 封止性、耐フラックス性、耐フラックス洗浄液性、耐封止材進入圧力性、信頼性に優れる半導体装置中空封止用熱硬化型シートと、それを用いて中空封止された半導体装置を提供する。【解決手段】 熱硬化性樹脂層と、前記熱硬化性樹脂層が、片面に形成される支持層と、を有し、前記支持層が、ガラス又はアルミニウム、銅、ステンレス、並びにそれら金属の合金から選ばれ、前記熱硬化性樹脂層の厚さが３〜３０μｍで、前記支持層の厚さが５〜５０μｍで、硬化前の熱硬化性樹脂層を１６０℃、２ＭＰａで１８秒間プレスした後におけるフロー量が１００〜１５００μｍである半導体装置中空封止用熱硬化型シート。【選択図】 図４