SEMICONDUCTOR DEVICE, AND METHOD OF MANUFACTURING THE SAME

PROBLEM TO BE SOLVED: To improve reliability.SOLUTION: A semiconductor device comprises: a semiconductor element 20 that comprises a first pillar 22; a semiconductor element 30 whose second pillar 32 is bonded with the first pillar 22, and flip-chip mounted on the semiconductor element 20; a barrier...

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Bibliographic Details
Main Author TADAKI SHINJI
Format Patent
LanguageEnglish
Japanese
Published 10.08.2017
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Summary:PROBLEM TO BE SOLVED: To improve reliability.SOLUTION: A semiconductor device comprises: a semiconductor element 20 that comprises a first pillar 22; a semiconductor element 30 whose second pillar 32 is bonded with the first pillar 22, and flip-chip mounted on the semiconductor element 20; a barrier layer 44 provided on at least one of the first pillar 22 and the second pillar 32; and a bonding material 46 that bonds the first pillar 22 and the second pillar 32 with each other. The bonding material 46 is contacted with at least one of the first pillar 22 and the second pillar 32, and with the barrier layer 44, and is formed of a metal compound of a metal element that configures a pillar contacted with the bonding material 46 among the first pillar 22 and the second pillar 32, and a metal element that configures solder.SELECTED DRAWING: Figure 2 【課題】信頼性を向上させること。【解決手段】第1ピラー22を備える半導体素子20と、第1ピラー22に第2ピラー32が接合されて、半導体素子20にフリップチップ実装された半導体素子30と、第1ピラー22及び第2ピラー32の少なくとも一方に設けられたバリア層44と、第1ピラー22と第2ピラー32とを接合する接合部材46と、を備え、接合部材46は、第1ピラー22及び第2ピラー32の少なくとも一方とバリア層44とに接していて第1ピラー22及び第2ピラー32のうちの接合部材46が接するピラーを構成する金属元素と半田を構成する金属元素との金属間化合物からなる、半導体装置。【選択図】図2
Bibliography:Application Number: JP20160019309