SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

• Main Authors: FUJII YUJI, NAKANISHI SHO
• Format: Patent
• Language: English; Japanese
• Published: 27.07.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To improve performance of a semiconductor device that includes an RC-IGBT.SOLUTION: An AlNiSi layer ML (a layer containing aluminum (AL), nickel (Ni) and silicon (Si)) is formed between a rear face Sb of a semiconductor substrate SB and a rear face electrode CE. Thus, a good ohmic junction can be obtained between the rear face electrode CE and an N-type layer NL constituting a cathode region of a built-in diode, and a good ohmic junction can be obtained between the rear face electrode CE and a P-type layer PL constituting a collector region of an IGBT. Each of the contents of aluminum (AL), nickel (Ni) and silicon (Si) in the AlNiSi layer ML is 10 at% or more.SELECTED DRAWING: Figure 1 【課題】ＲＣ−ＩＧＢＴを備える半導体装置の性能を向上させる。【解決手段】半導体基板ＳＢの裏面Ｓｂと裏面電極ＣＥとの間に、ＡｌＮｉＳｉ層ＭＬ（アルミニウム（Ａｌ）、ニッケル（Ｎｉ）およびシリコン（Ｓｉ）を含む層）を形成する。これにより、内蔵ダイオードのカソード領域を構成するＮ＋型層ＮＬと裏面電極ＣＥとの間に良好なオーミック接合が得られ、ＩＧＢＴのコレクタ領域を構成するＰ型層ＰＬと裏面電極ＣＥとの間に良好なオーミック接合を得ることができる。ＡｌＮｉＳｉ層ＭＬに含まれる、アルミニウム（Ａｌ）、ニッケル（Ｎｉ）およびシリコン（Ｓｉ）はそれぞれ１０ａｔ％以上である。【選択図】図１