SILICON CARBIDE DEVICE AND METHOD FOR FORMING SILICON CARBIDE DEVICE

PROBLEM TO BE SOLVED: To provide a silicon carbide device and a method for forming the silicon carbide device, and improve breakdown behavior and long-term reliability of the silicon carbide device.SOLUTION: A silicon carbide device 100 includes a silicon carbide substrate 110, an inorganic passivat...

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Main Authors JENS KONRATH, WOLFGANG BERGNER, HANS-JOACHIM SCHULZE, RUPP ROLAND, RUDOLF ELPELT, CHRISTIAN HECHT
Format Patent
LanguageEnglish
Japanese
Published 20.07.2017
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a silicon carbide device and a method for forming the silicon carbide device, and improve breakdown behavior and long-term reliability of the silicon carbide device.SOLUTION: A silicon carbide device 100 includes a silicon carbide substrate 110, an inorganic passivation layer structure 120, and a molding material layer 130. The inorganic passivation layer structure laterally covers at least partly a main surface of the silicon carbide substrate. The molding material layer is arranged adjacently to the inorganic passivation layer structure. An inorganic passivation structure is used to protect a silicon carbide surface.SELECTED DRAWING: Figure 1A 【課題】炭化珪素装置及び炭化珪素装置の形成方法を提供し、炭化珪素装置の破壊挙動（ｂｒｅａｋｄｏｗｎ ｂｅｈａｖｉｏｒ）と長期信頼性を改善する。【解決手段】炭化珪素装置１００は、炭化珪素基板１１０、無機パッシベーション層構造１２０、成形材料層１３０を含む。無機パッシベーション層構造は、横方向に炭化珪素基板の主面を少なくとも部分的に覆う。成形材料層は、無機パッシベーション層構造に隣接して配置される。炭化珪素表面を保護するために無機パッシベーション構造を使用する。【選択図】図１Ａ
Bibliography:Application Number: JP20170007094