TEMPERATURE SENSOR

• Main Authors: IWAKI TAKAO, SHIBUYA KEISUKE, SAWA AKIHITO, SUZUKI YOSHIMI, MIYAZAKI KENICHI
• Format: Patent
• Language: English; Japanese
• Published: 20.07.2017
• Subjects: COLORIMETRY; ELECTRICITY; MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT,POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRA-RED,VISIBLE OR ULTRA-VIOLET LIGHT; MEASURING; MEASURING QUANTITY OF HEAT; MEASURING TEMPERATURE; PHYSICS; RADIATION PYROMETRY; TESTING; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR

PROBLEM TO BE SOLVED: To provide a temperature sensor capable of making the transition temperature of a resistor film approach the room temperature.SOLUTION: A temperature sensor comprising: an infrared ray absorption film 6 for absorbing emitted infrared ray to cause a temperature variation; a resistor film 2 having a resistance value that varies with the temperature variation of the infrared absorption film 6; and a wiring layer 4 electrically connected to the resistor film 2 extracts the variation of resistance value of the resistor film 2 from the wiring layer 4 as a signal showing the intensity of the emitted infrared rat. The resistor film 2 is formed of vanadium oxide (IV) having added first and second elements. The valence M of the first element is greater than 4, and the valence N of the second element is smaller than 4. The added amount m (atom%) of the first element to the vanadium oxide (IV) forming the resistor film 2 is larger than the added amount of (atom%) of the second element.SELECTED DRAWING: Figure 1 【課題】抵抗体膜の転移温度を室温に近づけることができる温度センサを提供する。【解決手段】照射される赤外線を吸収して温度変化を生じる赤外線吸収膜６と、赤外線吸収膜６の温度変化に伴って抵抗値が変化する抵抗体膜２と、抵抗体膜２に電気的に接続される配線層４と、を備え、抵抗体膜２の抵抗値の変化を配線層４より赤外線の照射強度を表す信号として取り出す温度センサであって、抵抗体膜２は、第１元素と、第２元素とが添加された酸化バナジウム（IV）により構成されており、第１元素の価数Ｍは４より大きく、第２元素の価数Ｎは４より小さく、抵抗体膜２を構成する酸化バナジウム（IV）への第１元素の添加量ｍ（ａｔｏｍ％）は、第２元素の添加量ｎ（ａｔｏｍ％）よりも大きい。【選択図】図１