MONOMERS, POLYMERS AND PHOTORESIST COMPOSITIONS

• Main Authors: SUN JIBIN, LEE SEUNG HYUN, JEON KUN-BAK, BAE YOUNG CHEOL, CECILY ANDES
• Format: Patent
• Language: English; Japanese
• Published: 20.07.2017
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; CHEMISTRY; CINEMATOGRAPHY; COMPOSITIONS BASED THEREON; ELECTROGRAPHY; HOLOGRAPHY; MACROMOLECULAR COMPOUNDS OBTAINED BY REACTIONS ONLY INVOLVINGCARBON-TO-CARBON UNSATURATED BONDS; MATERIALS THEREFOR; METALLURGY; ORGANIC MACROMOLECULAR COMPOUNDS; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; THEIR PREPARATION OR CHEMICAL WORKING-UP

PROBLEM TO BE SOLVED: To provide improved polymers which enable the formation of fine patterns in the production of semiconductor devices, and photoresist compositions.SOLUTION: The present invention provides a polymer comprising a polymerization unit represented by formula (1) and a polymerization unit comprising an acid-labile group, and a photoresist composition comprising the polymer and a photoacid generator (Ris hydrogen).SELECTED DRAWING: Figure 2 【課題】半導体デバイス製造における微細パターンの形成を可能する改良されたポリマー、およびフォトレジスト組成物の提供。【解決手段】式（１）で表される重合単位、および酸不安定基を含む重合単位を含むポリマー、及び該ポリマーと光酸発生剤とを含むフォトレジスト組成物。（Ｒ１は水素を表す）【選択図】図２