SINGLE CRYSTAL 4H-SiC SUBSTRATE AND PRODUCTION METHOD THEREOF

• Main Authors: HAMANO KENICHI, ONO AKIHITO, TANAKA TAKANORI, KAWATSU YOSHIHEI, TOMITA NOBUYUKI, MITANI YOICHIRO
• Format: Patent
• Language: English; Japanese
• Published: 13.07.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a single crystal 4H-SiC substrate capable of reducing crystal defects, and to provide a production method thereof.SOLUTION: A 4H-SiC bulk single crystal 1 having surface smoothness, and having an off-angle of 2 degrees or more and 10 degrees or less is prepared. A first single crystal 4H-SiC layer 3 having a recess 2 is epitaxially grown on the 4H-SiC bulk single crystal 1. When expressing a film thickness of the first single crystal 4H-SiC layer 3 as X[μm], a diameter Y[μm] of the recess 2 is 0.2×X or more and 2×X or less, and a depth Z[μm] of the recess 2 is (0.95×X+0.5)×0.001 or more and 0.01×X or less.SELECTED DRAWING: Figure 2 【課題】結晶欠陥を低減することができる単結晶４Ｈ−ＳｉＣ基板及びその製造方法を得る。【解決手段】平坦性を有し、オフ角が２度以上１０度以下である４Ｈ−ＳｉＣバルク単結晶基板１を準備する。４Ｈ−ＳｉＣバルク単結晶基板１上に凹部２を有する第１の単結晶４Ｈ−ＳｉＣ層３をエピタキシャル成長させる。第１の単結晶４Ｈ−ＳｉＣ層３の膜厚をＸ［μｍ］とすると、凹部２の直径Ｙ［μｍ］は０．２×Ｘ以上、２×Ｘ以下であり、かつ凹部２の深さＺ［μｍ］は（０．９５×Ｘ＋０．５）×０．００１以上、０．０１×Ｘ以下である。【選択図】図２