MAGNETIC MEMORY

• Main Authors: OSAWA YUICHI, KAMIGUCHI YUZO, YODA HIROAKI, SHIMOMURA NAOHARU, DAIBO TATATOMI, SHIRATORI SATOSHI, IGUCHI TOMOAKI, ALTANSARGAI BUYANDALAI
• Format: Patent
• Language: English; Japanese
• Published: 22.06.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INFORMATION STORAGE; PHYSICS; SEMICONDUCTOR DEVICES; STATIC STORES

PROBLEM TO BE SOLVED: To provide a magnetic memory capable of achieving reduction in energy consumption.SOLUTION: A magnetic memory according to an embodiment comprises: a conductive layer having a first terminal and a second terminal; a plurality of magnetoresistive elements arranged on the conductive layer between the first terminal and the second terminal so as to be separated from each other, each magnetoresistive element having a reference layer, a storing layer arranged between the reference layer and the conductive layer, and a non-magnetic layer arranged between the storing layer and the reference layer; and a circuit that applies a first potential to the reference layers of the plurality of magnetoresistive elements and applies a first writing current between the first terminal and the second terminal, and that applies a second potential to a reference layer of a magnetoresistive element to which data is to be written, of the plurality of magnetoresistive elements and applies a second writing current reverse to the first writing current between the first terminal and the second terminal.SELECTED DRAWING: Figure 1 【課題】消費エネルギーの低減を実現することのできる磁気メモリを提供する。【解決手段】本実施形態による磁気メモリは、第１端子および第２端子を有する導電層と、前記第１端子と前記第２端子との間の前記導電層に互いに離間して配置された複数の磁気抵抗素子であって、各磁気抵抗素子は、参照層と、前記参照層と前記導電層との間に配置された記憶層と、前記記憶層と前記参照層との間に配置された非磁性層と、を有する複数の磁気抵抗素子と、前記複数の磁気抵抗素子の前記参照層に第１電位を印加するとともに前記第１端子および第２端子間に第１書き込み電流を流し、前記複数の磁気抵抗素子のうちデータを書き込むべき磁気抵抗素子の前記参照層に第２電位を印加するとともに前記第１端子および第２端子間に前記第１書き込み電流に対して逆向きの第２書き込み電流を流す回路と、を備えている。【選択図】図１