PLASMA PROCESSING DEVICE AND METHOD FOR OPERATING PLASMA PROCESSING DEVICE

• Main Authors: USUI TAKETO, KAWAGUCHI YOHEI, NAKAMOTO SHIGERU, INOUE TOMOMI, TOGAMI MASATO
• Format: Patent
• Language: English; Japanese
• Published: 22.06.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a plasma processing device capable of detecting a remaining film thickness and an etching amount with high accuracy, or a method for operating the plasma processing device.SOLUTION: A plasma processing device which is arranged to etch, by plasma, a sample disposed in a processing room arranged in a vacuum chamber comprises: a photodetector operable to detect the intensity of light with a plurality of wavelengths from inside the processing room at a plurality of points of time while the sample is processed; a component detector operable to detect, of time-series data of the plurality of wavelengths obtained from an output of the photodetector at an arbitrary point of time of the plurality of points of time, components having a high correlation, while using a result of main component analysis on the time-series data; and a determination device operable to determine an amount or end point of the etching process based on a change of at least one light intensity of the plurality of wavelengths detected by using the time-series data with the components having a high correlation excluded.SELECTED DRAWING: Figure 1 【課題】残り膜厚やエッチング量を高い精度で検出できるプラズマ処理装置またはプラズマ処理装置の運転方法を提供する。【解決手段】真空容器内に配置された処理室内に配置された試料を当該処理室内に形成したプラズマを用いてエッチング処理するプラズマ処理装置であって、前記試料の処理中の複数の時刻で処理室内からの複数の波長の光の強度を検出する光検出器と、この光検出器の出力から得られた前記複数の時刻のうちの任意の時刻における前記複数の波長の時系列のデータの間で相関性の高い成分を前記時系列のデータを主成分分析した結果を用いて検出する成分検出器と、前記相関性の高い成分が除去された前記時系列のデータを用いて検出された少なくとも１つの前記複数の波長の光の強度の変化に基づいて前記エッチング処理の量または終点を判定する判定器とを備えた。【選択図】図１