SEMICONDUCTOR DEVICE

• Main Author: ARAO TATSUYA
• Format: Patent
• Language: English; Japanese
• Published: 15.06.2017
• Subjects: BASIC ELECTRIC ELEMENTS; DEVICES OR ARRANGEMENTS, THE OPTICAL OPERATION OF WHICH ISMODIFIED BY CHANGING THE OPTICAL PROPERTIES OF THE MEDIUM OF THEDEVICES OR ARRANGEMENTS FOR THE CONTROL OF THE INTENSITY,COLOUR, PHASE, POLARISATION OR DIRECTION OF LIGHT, e.g.SWITCHING, GATING, MODULATING OR DEMODULATING; ELECTRIC HEATING; ELECTRIC LIGHTING NOT OTHERWISE PROVIDED FOR; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FREQUENCY-CHANGING; NON-LINEAR OPTICS; OPTICAL ANALOGUE/DIGITAL CONVERTERS; OPTICAL LOGIC ELEMENTS; OPTICS; PHYSICS; SEMICONDUCTOR DEVICES; TECHNIQUES OR PROCEDURES FOR THE OPERATION THEREOF

PROBLEM TO BE SOLVED: To examine internal stress of a semiconductor device including a conductive film, which is affected by the internal stress of the conductive film.SOLUTION: The semiconductor device including an n-channel type TFT provided on an insulating surface is so configured that impurity elements are introduced to a conductive film, for instance, a gate electrode so that a semiconductor film is subjected to a pulling stress. The semiconductor device including a p-channel type TFT provided on an insulating surface is so configured that impurity elements are introduced to a conductive film, for instance, a gate electrode so that a semiconductor film is subjected to a compression stress.SELECTED DRAWING: Figure 6 【課題】導電膜を有する半導体装置は、導電膜の内部応力の影響を受ける。内部応力について検討する。【解決手段】絶縁表面上に設けられたｎチャネル型ＴＦＴを有する半導体装置は、半導体膜が引っ張り応力を受けるように、導電膜、例えばゲート電極に不純物元素が導入され、絶縁表面上に設けられたｐチャネル型ＴＦＴを有する半導体装置は、半導体膜が圧縮応力を受けるように、導電膜、例えばゲート電極に不純物が導入されている。【選択図】図６