METHOD OF CLEANING ELECTRODE AND METHOD OF MANUFACTURING INTEGRATED CIRCUIT DEVICE

PROBLEM TO BE SOLVED: To provide a method of cleaning an electrode capable of enhancing the cleaning ability of cleaning by laser irradiation and a method for manufacturing an integrated circuit device.SOLUTION: The cleaning method includes cleaning a surface 32a of a surface layer 32 by irradiating...

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Bibliographic Details
Main Authors OISHI SHINGO, YAMAMOTO AKINAGA, UCHIDA KOSUKE, SAITO HIROSHI, YAMADA RYUJI, MURAMATSU MASAHARU
Format Patent
LanguageEnglish
Japanese
Published 01.06.2017
Subjects
BASIC ELECTRIC ELEMENTS
CLEANING
CLEANING IN GENERAL
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PERFORMING OPERATIONS
PREVENTION OF FOULING IN GENERAL
SEMICONDUCTOR DEVICES
TRANSPORTING
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Summary:PROBLEM TO BE SOLVED: To provide a method of cleaning an electrode capable of enhancing the cleaning ability of cleaning by laser irradiation and a method for manufacturing an integrated circuit device.SOLUTION: The cleaning method includes cleaning a surface 32a of a surface layer 32 by irradiating the surface 32a of the surface layer 32 of an electrode 30 having an underlying layer 31 containing at least one of Ni and Ni alloy and the surface layer 32 containing Au provided on the underlying layer 31 with pulsed light L emitted from a femtosecond laser or a picosecond laser.SELECTED DRAWING: Figure 1 【課題】レーザ照射による洗浄のクリーニング能力を高めることが可能な、電極のクリーニング方法および集積回路装置の製造方法を提供する。【解決手段】このクリーニング方法は、Ｎｉ及びＮｉ合金の少なくとも一方を含む下地層３１と、下地層３１上に設けられたＡｕを含む表層３２とを有する電極３０の表層３２の表面３２ａに対し、フェムト秒レーザ若しくはピコ秒レーザから出射されたパルス光Ｌを照射することにより、表層３２の表面３２ａのクリーニングを行うことを特徴とする。【選択図】図１
Bibliography:Application Number: JP20150225800