SEMICONDUCTOR DEVICE MANUFACTURING METHOD

• Main Authors: TAKE NAOYA, KADOGUCHI TAKUYA
• Format: Patent
• Language: English; Japanese
• Published: 25.05.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To produce (Cu,Ni)Snof a scheduled quantity on each Ni film of two components which are solder bonded to each other.SOLUTION: A semiconductor device manufacturing method comprises a first heat treatment step, a second heat treatment step and a third heat treatment step. In the first heat treatment step, a first Sn-Cu solder containing Cu at equal to or more than 0.9 weight percent is melted on a Ni film formed on a first component and (Cu,Ni)Snis produced on the Ni film of the first component. In the second heat treatment step, a second Sn-Cu solder containing Cu at equal to or more than 0.9 weight percent is melted on a Ni film formed on a second component and (Cu,Ni)Snis produced on the Ni film of the second component. In the third heat treatment step, the first Sn-Cu solder after the first heat treatment step and the second Sn-Cu solder after the second heat treatment step are melted to be integrated to bond the first component and the second component to each other.SELECTED DRAWING: Figure 3 【課題】 互いにはんだ付けされる二つの部材の各Ｎｉ膜上に予定された量の（Ｃｕ，Ｎｉ）６Ｓｎ５を生成する。【解決手段】半導体装置の製造方法は、第１熱処理工程と第２熱処理工程と第３熱処理工程を備える。第１熱処理工程では、Ｃｕを０．９重量パーセント以上含有する第１のＳｎ−Ｃｕ系はんだを、第１の部材に形成されたＮｉ膜上で溶融させて、第１の部材のＮｉ膜上に（Ｃｕ，Ｎｉ）６Ｓｎ５を生成させる。第２熱処理工程では、Ｃｕを０．９重量パーセント以上含有する第２のＳｎ−Ｃｕ系はんだを、第２の部材に形成されたＮｉ膜上で溶融させて、第２の部材のＮｉ膜上に（Ｃｕ，Ｎｉ）６Ｓｎ５を生成させる。そして、第３熱処理工程では、第１熱処理工程後の第１のＳｎ−Ｃｕ系はんだと第２熱処理工程後の第２のＳｎ−Ｃｕ系はんだとを溶融させて一体化し、第１の部材と第２の部材とを互いに接合する。【選択図】図３