PROCESSING METHOD IN PROCESSING DEVICE USING HALOGEN-BASED GAS

• Main Authors: NAGAIKE HIROSHI, MATSUO TOMOHITO
• Format: Patent
• Language: English; Japanese
• Published: 25.05.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To suppress corrosion itself, caused by a halogen-based gas, that occurs in a processing device using the halogen-based gas.SOLUTION: In a processing device for performing predetermined processing on a processed object by supplying a halogen-based gas into a chamber to which a member with an oxide film formed on a surface is connected or which includes an oxide film on a surface while keeping the inside of the chamber in a vacuum state, when releasing atmospheric air from the chamber after performing the predetermined processing on the processed object within the chamber once or multiple times, before releasing atmospheric air from the chamber, an oxygen gas or dry air is supplied to the chamber and the chamber is purged.SELECTED DRAWING: Figure 2 【課題】ハロゲン系ガスを用いる処理装置において生じるハロゲン系ガスによる腐食自体を抑制する。【解決手段】表面に酸化膜が形成された部材が接続され、または表面に酸化膜を有するチャンバ内を真空に保持しつつ、チャンバ内にハロゲン系ガスを供給して被処理体に所定の処理を行う処理装置において、チャンバ内で被処理体に対する所定の処理を１回または複数回行った後、チャンバを大気開放するにあたり、大気開放に先立って、チャンバに酸素ガスまたはドライエアを供給してチャンバをパージする。【選択図】図２