MULTILAYER BODY, METHOD FOR MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE

• Main Authors: ABE SATOSHI, MURAKAMI YOSHINORI, AZUMA AYAKA, NISHIMURA MASATO, MATSUYA NORITAKA
• Format: Patent
• Language: English; Japanese
• Published: 25.05.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; PERFORMING OPERATIONS; SEMICONDUCTOR DEVICES; TRANSPORTING

PROBLEM TO BE SOLVED: To provide a multilayer body having high adhesion reliability of an insulating layer to a rewiring layer, a manufacturing method of the same, and a semiconductor device.SOLUTION: The multilayer body at least includes: a rewiring layer containing copper; an insulating layer containing polyimide or polybenzoxazole; and a copper oxide layer on part or the whole of an interface between the insulating layer and the rewiring layer. An average thickness of the copper oxide layer obtained by an infrared reflection absorption method is 18 nm or more and 100 nm or less.SELECTED DRAWING: Figure 1 【課題】再配線層への絶縁層の密着信頼性が高い多層体、その製造方法及び半導体装置を提供する。【解決手段】銅を含む再配線層、ポリイミド又はポリベンゾオキサゾールを含む絶縁層、及び前記絶縁層と再配線層の界面の一部又は全部に酸化銅層を少なくとも含む多層体であって、赤外反射吸収法により求めた前記酸化銅層の平均厚さが１８ｎｍ以上１００ｎｍ以下である多層体。【選択図】図１