NEAR-INFRARED ABSORBING GLASS WAFER AND SEMICONDUCTOR WAFER LAMINATE

• Main Authors: OI YOSHIHARU, HODAKA HIROKI
• Format: Patent
• Language: English; Japanese
• Published: 25.05.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; LAYERED PRODUCTS; LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT ORNON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM; OPTICAL ELEMENTS, SYSTEMS, OR APPARATUS; OPTICS; PERFORMING OPERATIONS; PHYSICS; SEMICONDUCTOR DEVICES; TRANSPORTING

PROBLEM TO BE SOLVED: To provide an optical filter which enables miniaturization and height-reduction of camera modules and offers superior uniformity of optical characteristics and high manufacturing productivity.SOLUTION: A near-infrared absorbing glass wafer 10 of the present invention comprises a glass wafer 12 and an absorption layer 11 formed on at least one principal surface of the glass wafer 12, the absorption layer 11 containing a transparent resin and an absorptive pigment and being configured to satisfy -15%≤Δt/t≤15%, where trepresent a mean thickness and Δt represents a thickness difference relative to the mean thickness t.SELECTED DRAWING: Figure 1A 【課題】カメラモジュールの小型化、低背化が実現でき、光学特性の均一性に優れ、かつ生産性の高い光学フィルタを実現する。【解決手段】本発明による近赤外線吸収型ガラスウェハ１０は、ガラスウェハ１２と、ガラスウェハ１２の少なくとも一方の主面に吸収層１１を備え、吸収層１１は、透明樹脂と吸収色素を含有し、吸収層１１は、膜厚の平均値をｔ０、前記平均値ｔ０に対する膜厚の差分値をΔｔとしたとき、−１５％≦Δｔ／ｔ０≦１５％を満たす。【選択図】図１Ａ