SUSCEPTOR FOR HOLDING SEMICONDUCTOR WAFER HAVING ORIENTATION NOTCH, METHOD FOR DEPOSITING LAYER ON SEMICONDUCTOR WAFER, AND SEMICONDUCTOR WAFER

• Main Authors: CHRISTIAN HAGER, SCHAUER REINHARD
• Format: Patent
• Language: English; Japanese
• Published: 18.05.2017
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a susceptor for holding a semiconductor wafer having an orientation notch, a method for depositing a layer on a semiconductor wafer, and a semiconductor wafer.SOLUTION: A susceptor for holding a semiconductor wafer having an orientation notch during the deposition of a layer on a front side of the semiconductor wafer includes: a placement surface for placing the semiconductor wafer in the edge region of a rear side of the semiconductor wafer; a stepped outer boundary of the placement surface; and an uneven portion of the outer boundary of the placement surface for placement of the partial region of the edge region of the rear side of the semiconductor wafer. The orientation notch is located onto a partial region of the placement surface delimited by the uneven portion of the outer boundary of the placement surface. In a method for depositing a layer on a semiconductor wafer having an orientation notch, such a susceptor is used. A semiconductor wafer is made of monocrystalline silicon.SELECTED DRAWING: Figure 2 【課題】配向ノッチを有する半導体ウエハーを保持するためのサセプタ、半導体ウエハー上に層を堆積するための方法、および半導体ウエハーを提供する。【解決手段】配向ノッチを有する半導体ウエハーを、半導体ウエハーの表面側上への層の堆積中に、保持するためのサセプタであって、半導体ウエハーを半導体ウエハーの裏側のエッジ領域において載置するための載置表面と、載置表面の段差状の外側境界と、半導体ウエハーの裏側のエッジ領域の部分領域の載置のための載置表面の外側境界の凹凸部とを有し、配向ノッチは、載置表面の外側境界の凹凸部によって定められた載置表面の部分領域上に配置される、サセプタである。配向ノッチを有する半導体ウエハー上に層を堆積するための方法であってサセプタが使用され、半導体ウエハーは単結晶シリコンから作られる。【選択図】図２