SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

• Main Author: KOYAMA MASATOSHI
• Format: Patent
• Language: English; Japanese
• Published: 27.04.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method and a semiconductor device which can inhibit deterioration in surface morphology of a semiconductor layer.SOLUTION: A semiconductor device manufacturing method comprises: an impurity implantation process of ion implanting an impurity into a nitride semiconductor layer provided on a substrate 2; a first film formation process of forming a first silicon nitride film 23 on a surface of the nitride semiconductor layer after the impurity implantation process; a heat treatment process of performing a heat treatment on the nitride semiconductor layer and the first silicon nitride film 23; and a first removal process of removing the first silicon nitride film 23 after the heat treatment process. The first silicon nitride film 23 has a N-H stretching vibration peak intensity to a Si-N stretching vibration peak intensity by Fourier transform infrared spectroscopy (FT-IR) of equal to or less than 1/30.SELECTED DRAWING: Figure 3 【課題】半導体層の表面モフォロジーの悪化を抑制できる半導体装置の製造方法及び半導体装置を提供する。【解決手段】半導体装置の製造方法は、基板２上に設けられた窒化物半導体層に不純物をイオン注入する不純物注入工程と、不純物注入工程の後、窒化物半導体層の表面に第１窒化シリコン膜２３を形成する第１膜形成工程と、窒化物半導体層および第１窒化シリコン膜２３を熱処理する熱処理工程と、熱処理工程の後、第１窒化シリコン膜２３を除去する第１除去工程と、を有する。第１窒化シリコン膜２３は、フーリエ変換赤外分光法（ＦＴ−ＩＲ）におけるＳｉ−Ｎの伸縮振動ピーク強度に対し、Ｎ−Ｈの伸縮振動ピーク強度およびＳｉ−Ｈの伸縮振動ピーク強度が１／３０以下である。【選択図】図３