SEMICONDUCTOR DEVICE

• Main Authors: SUZUKI TAKUMA, NISHIO JOJI, KONO HIROSHI, SHINOHE TAKASHI
• Format: Patent
• Language: English; Japanese
• Published: 20.04.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device which has increased avalanche capability while achieving low on-resistance and stable withstand voltage.SOLUTION: A semiconductor device according to an embodiment comprises first through fourth semiconductor regions. The first semiconductor region has a first part and a second part and the first part is provided on a portion of the second part. The second semiconductor region is provided on an upper side of the second part and adjacent to the first part. The third semiconductor region has a high-resistance region and a low-resistance region having a resistance value lower than that of the high-resistance region, and is provided on an upper side of the portion of the second semiconductor region and away from the first part. The fourth semiconductor region is provided on an upper side of another portion of the second semiconductor region. A region out of the second semiconductor region on the side of contacting the third and fourth semiconductor regions includes a first region and a second region. The second region electrically conducting the first region and the fourth semiconductor region. The second region exists below the high-resistance region of the third semiconductor region and does not exist below the low-resistance region.SELECTED DRAWING: Figure 1 【課題】低いオン抵抗及び安定した耐圧を実現するとともに、アバランシェ耐量を高めた半導体装置を提供すること。【解決手段】実施形態に係る半導体装置は、第１〜第４半導体領域を備える。第１半導体領域は、第１部分と第２部分とを有し、第２部分の一部の上に第１部分が設けられる。第２半導体領域は、第２部分の上側であって第１部分と隣接して設けられる。第３半導体領域は、高抵抗領域と高抵抗領域よりも抵抗値の低い低抵抗領域とを有し、第２半導体領域の一部の上側であって第１部分と離間して設けられる。第４半導体領域は、第２半導体領域の別の一部の上側に設けられる。第２半導体領域のうち第３及び第４半導体領域と接する側の領域は、第１領域と第２領域とを含む。第２領域は、第１領域と第４半導体領域とを電気的に導通させる。第２領域は、第３半導体領域の高抵抗領域の下にあり、低抵抗領域の下にはない。【選択図】図１