MANUFACTURING METHOD FOR MPS DIODE

• Main Authors: NIWA SHIGEKI, FUJII TAKAHIRO, OZAKI MASAYOSHI, OKA TORU
• Format: Patent
• Language: English; Japanese
• Published: 06.04.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a technique for reducing the number of steps when manufacturing a MPS diode.SOLUTION: A manufacturing method for MPS diode includes a semiconductor layer formation step of forming a semiconductor layer from a nitride semiconductor, a film formation step of forming a silicon-containing film having an opening and a thickness of 1-100 nm, on the N type semiconductor layer, and an ion injection step of injecting ions of a P type impurity into the N type semiconductor layer from above the silicon-containing film. In the ion injection step, a P type region is formed in a part of the N type semiconductor layer where ion injection was performed via the silicon-containing film, and an N type region is formed in a part of the N type semiconductor layer where ion injection was performed via the opening.SELECTED DRAWING: Figure 2 【課題】ＭＰＳダイオードを製造する際の工程数を減らす技術を提供する。【解決手段】ＭＰＳダイオードの製造方法は、窒化物半導体からＮ型半導体層を形成する半導体層形成工程と、前記Ｎ型半導体層上に、開口部を備え、厚さが１ｎｍ以上１００ｎｍ以下であるケイ素含有膜を形成する膜形成工程と、前記ケイ素含有膜上から、前記Ｎ型半導体層にＰ型不純物をイオン注入するイオン注入工程と、を備え、前記イオン注入工程において、前記ケイ素含有膜を介して前記イオン注入が行われた前記Ｎ型半導体層の一部には、Ｐ型領域が形成され、前記開口部を介して前記イオン注入が行われた前記Ｎ型半導体層の一部には、Ｎ型領域が形成される。【選択図】図２