EPITAXIAL GROWTH METHOD FOR SILICON CARBIDE
PROBLEM TO BE SOLVED: To provide a method capable of enhancing in-plane uniformity of doping density during the epitaxial growth of an SiC thin film by a thermal CVD method.SOLUTION: An epitaxial growth method for SiC is characterized in that, in epitaxial growth on an SiC single crystal substrate,...
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Main Authors | , , , , |
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Format | Patent |
Language | English Japanese |
Published |
06.04.2017
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a method capable of enhancing in-plane uniformity of doping density during the epitaxial growth of an SiC thin film by a thermal CVD method.SOLUTION: An epitaxial growth method for SiC is characterized in that, in epitaxial growth on an SiC single crystal substrate, alkylsilane such as monomethylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, monoethylsilane and diethylsilane is used as raw material gas to be supplied onto a surface of the SiC single crystal substrate.SELECTED DRAWING: None
【課題】熱CVD法によるSiC薄膜のエピタキシャル成長において、ドーピング密度の面内均一性を高めることができる方法を提供する。【解決手段】SiC単結晶基板へのエピタキシャル成長において、モノメチルシラン、ジメチルシラン、トリメチルシラン、テトラメチルシラン、モノエチルシラン、ジエチルシラン等のようなアルキルシランを原料ガスとして用いて、SiC単結晶基板表面に供給することを特徴とするSiCエピタキシャル成長方法である。【選択図】なし |
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Bibliography: | Application Number: JP20150189394 |