EPITAXIAL GROWTH METHOD FOR SILICON CARBIDE

• Main Authors: ITO WATARU, TACHIKAWA AKIYOSHI, HOSHINO TAIZO, SHIMIZU MASAYOSHI, AISATO TAKASHI
• Format: Patent
• Language: English; Japanese
• Published: 06.04.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method capable of enhancing in-plane uniformity of doping density during the epitaxial growth of an SiC thin film by a thermal CVD method.SOLUTION: An epitaxial growth method for SiC is characterized in that, in epitaxial growth on an SiC single crystal substrate, alkylsilane such as monomethylsilane, dimethylsilane, trimethylsilane, tetramethylsilane, monoethylsilane and diethylsilane is used as raw material gas to be supplied onto a surface of the SiC single crystal substrate.SELECTED DRAWING: None 【課題】熱ＣＶＤ法によるＳｉＣ薄膜のエピタキシャル成長において、ドーピング密度の面内均一性を高めることができる方法を提供する。【解決手段】ＳｉＣ単結晶基板へのエピタキシャル成長において、モノメチルシラン、ジメチルシラン、トリメチルシラン、テトラメチルシラン、モノエチルシラン、ジエチルシラン等のようなアルキルシランを原料ガスとして用いて、ＳｉＣ単結晶基板表面に供給することを特徴とするＳｉＣエピタキシャル成長方法である。【選択図】なし