METHOD FOR MANUFACTURING SEALED OPTICAL SEMICONDUCTOR ELEMENT AND METHOD FOR MANUFACTURING LIGHT-EMITTING DEVICE

PROBLEM TO BE SOLVED: To provide a method for manufacturing a sealed optical semiconductor element capable of suppressing a sealing layer from entering between an optical semiconductor element and a pressure-sensitive adhesion layer in a step (2) of sealing the optical semiconductor element by the s...

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Bibliographic Details
Main Authors YOSHIDA NAOKO, ISHII ATSUSHI, MITANI MUNEHISA, EBE YUKI
Format Patent
LanguageEnglish
Japanese
Published 23.03.2017
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Summary:PROBLEM TO BE SOLVED: To provide a method for manufacturing a sealed optical semiconductor element capable of suppressing a sealing layer from entering between an optical semiconductor element and a pressure-sensitive adhesion layer in a step (2) of sealing the optical semiconductor element by the sealing layer and suppressing the pressure-sensitive adhesion layer from sticking to an electrode surface of the optical semiconductor element in the sealed optical semiconductor element in a step (3) of peeling the sealed optical semiconductor element from the pressure-sensitive adhesion layer, and a method for manufacturing a light-emitting device.SOLUTION: A method for manufacturing a sealed optical semiconductor element 11 comprises: a step (1) of pressure-sensitively bonding an electrode 6 of an optical semiconductor element 1 including an electrode surface 3 provided with the electrode 6 to a pressure-sensitive adhesion layer 9; a step (2) of sealing the optical semiconductor element 1 by a sealing layer 10 after the step (1); and a step (3) of peeling the sealed optical semiconductor element 11 from the pressure-sensitive adhesion layer 9 after the step (2). The peeling adhesive strength PS of the pressure-sensitive adhesion layer 9 is not less than 220 mN/10 mmand not more than 300 mN/10 mm.SELECTED DRAWING: Figure 1 【課題】光半導体素子を封止層によって封止する工程(2)において、光半導体素子と感圧接着層との間に、封止層が進入することを抑制することができるとともに、封止光半導体素子を感圧接着層から剥離する工程(3)において、感圧接着層が、封止光半導体素子における光半導体素子の電極面に付着することを抑制することのできる、封止光半導体素子および発光装置の製造方法を提供すること。【解決手段】封止光半導体素子11の製造方法は、電極6が設けられる電極面3を有する光半導体素子1の電極6を、感圧接着層9に感圧接着する工程(1)、工程(1)の後に、光半導体素子1を封止層10によって封止する工程(2)、および、工程(2)の後に、封止光半導体素子11を感圧接着層9から剥離する工程(3)を備える。感圧接着層9の剥離接着力PSが、220mN/10mm2以上、300mN/10mm2以下である。【選択図】図1
Bibliography:Application Number: JP20150180714