METHOD FOR MANUFACTURING SILICON CARBIDE EPITAXIAL SUBSTRATE

• Main Author: HORI TSUTOMU
• Format: Patent
• Language: English; Japanese
• Published: 23.03.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMISTRY; CRYSTAL GROWTH; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a method for manufacturing a silicon carbide epitaxial substrate for forming a silicon carbide layer superior in the in-plane uniformity of an impurity concentration.SOLUTION: A method for manufacturing a silicon carbide epitaxial substrate comprises the steps of: heating a reaction chamber 45 of a film deposition apparatus 40 to perform degasification; and causing a silicon carbide layer to epitaxially grow on a surface of a silicon carbide monocrystalline substrate 20 in the reaction chamber 45, using a gas including a silicon atom, a gas including a carbon atom, an ammonia gas, and a hydrogen gas serving as a carrier gas and having a dew point of -100°C or under.SELECTED DRAWING: Figure 2 【課題】不純物濃度の面内均一性に優れた炭化珪素層を形成するための炭化珪素エピタキシャル基板の製造方法を提供する。【解決手段】炭化珪素エピタキシャル基板の製造方法は、成膜装置４０の反応室４５を加熱して脱ガスを行う工程と、シリコン原子を含むガスと、炭素原子を含むガスと、アンモニアガスと、キャリアガスである露点が−１００℃以下の水素ガスとを用いて、反応室４５内の炭化珪素単結晶基板２０の表面に炭化珪素層をエピタキシャル成長する工程とを備える。【選択図】図２