SEMICONDUCTOR DEVICE OF BIPOLAR OPERATION TYPE AND ITS USE METHOD
PROBLEM TO BE SOLVED: To provide a semiconductor device of bipolar operation type, which makes it possible to render switching loss and noise reduction compatible without using a special circuit control.SOLUTION: As a structure for an IGBT, a thinning structure is employed, which forms in an area be...
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Main Authors | , , , , |
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Format | Patent |
Language | English Japanese |
Published |
16.03.2017
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a semiconductor device of bipolar operation type, which makes it possible to render switching loss and noise reduction compatible without using a special circuit control.SOLUTION: As a structure for an IGBT, a thinning structure is employed, which forms in an area between gates an area where an n-type emitter area is not provided. The IGBT employing the thinning structure effectively works in a switching operation by virtue of negative capacity given by gate capacity. Switching loss and current surge, which may cause problem in use of the IGBT, have a trade-off relation with respect to the ratio RW (=Wflo/Wemi) of the width Wflo of a portion with no emitter to the width Wemi of an emitter area. Obtaining through simulation a compatible range of RW, which makes the switching loss and current surge equal to an upper limit value or below, eliminates the need for a special gate drive circuit.SELECTED DRAWING: Figure 1
【課題】特殊な回路制御を用いずにスイッチング損失とノイズ低減を両立させることができるバイポーラ動作型の半導体装置およびその使用方法を提供する。【解決手段】IGBTの構造として、ゲート間の領域にn型エミッタ領域を設けない領域を形成する間引き構造を採用する。間引き構造を採用するIGBTは、ゲート容量が負性容量を呈することで、スイッチング動作に有利に働く。エミッタを設けない部分の幅寸法Wfloとエミッタ領域の幅寸法Wemiの比RW(=Wflo/Wemi)に対して、IGBTの使用に際して課題となるスイッチング損失および電流サージはトレードオフの関係にある。このスイッチング損失および電流サージを上限値以下にするRWの両立範囲をシミュレーションにより求めることで、特殊なゲート駆動回路が不要となる。【選択図】図1 |
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Bibliography: | Application Number: JP20150177593 |