HIGH-FREQUENCY SEMICONDUCTOR DEVICE

• Main Author: KOJIMA HARUO
• Format: Patent
• Language: English; Japanese
• Published: 02.03.2017
• Subjects: AMPLIFIERS; BASIC ELECTRONIC CIRCUITRY; ELECTRICITY

PROBLEM TO BE SOLVED: To provide a small-sized high-frequency semiconductor device having high power addition efficiency.SOLUTION: A high-frequency semiconductor device comprises: a distortion compensation circuit; and a high-frequency semiconductor amplifier circuit being connected to the distortion compensation circuit and amplifying electric power of a high frequency signal. The high-frequency semiconductor amplifier circuit comprises: a first high-frequency semiconductor amplifier element provided to a GaN substrate; a second high-frequency semiconductor amplifier element provided to a GaAs substrate; a first switch supplying the high frequency signal to the first high-frequency semiconductor amplifier element or the second high-frequency semiconductor amplifier element; and a switch control section controlling operation of the first switch based on a part of the high frequency signal. The switch control section controls the operation of the first switch so as to supply the high frequency signal to the first high-frequency semiconductor amplifier element when the high frequency signal has a duty ratio greater than a predetermined duty ratio, and to supply the high frequency signal to the second high-frequency semiconductor amplifier element when the high frequency signal has a duty ratio equal to the predetermined duty ratio or less.SELECTED DRAWING: Figure 1 【課題】小型かつ高い電力付加効率を有する高周波半導体装置を提供する。【解決手段】実施形態に係る高周波半導体装置は、歪み補償回路と、前記歪み補償回路に接続され、高周波信号の電力を増幅させる高周波半導体増幅回路と、を備る。前記高周波半導体増幅回路は、ＧａＮ基板に設けられた第１の高周波半導体増幅素子と、ＧａＡｓ基板に設けられた第２の高周波半導体増幅素子と、前記第１の高周波半導体増幅素子または前記第２の高周波半導体増幅素子に前記高周波信号を供給する第１のスイッチと、前記高周波信号の一部に基づいて第１のスイッチの動作を制御するスイッチ制御部と、を具備する。前記スイッチ制御部は、前記高周波信号が所定のデューティ比より大きいとき、前記高周波信号を前記第１の高周波半導体増幅素子に供給し、前記高周波信号が所定のデューティ比以下のとき、前記高周波信号を前記第２の高周波半導体増幅素子に供給するように、前記第１のスイッチの動作を制御する。【選択図】図１