CHEMICAL AND MECHANICAL POLISHING PAD COMPOSITE POLISHING LAYER PREPARATION SUBSTANCE

• Main Authors: MARK R STUCK, JULIA KOZHUKH, TERESA BRUGAROLAS BRUFAU, GEORGE C JACOB, JEFFREY B MILLER, QIAN BAINIAN, DIEGO LUGO, JEFFREY JAMES HENDRON, TONY QUAN TRAN
• Format: Patent
• Language: English; Japanese
• Published: 16.02.2017
• Subjects: BASIC ELECTRIC ELEMENTS; DRESSING OR CONDITIONING OF ABRADING SURFACES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS; GRINDING; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; PERFORMING OPERATIONS; POLISHING; SEMICONDUCTOR DEVICES; TRANSPORTING

PROBLEM TO BE SOLVED: To provide a polishing layer design which expands the operation performance range of a chemical and mechanical polishing pad, corresponding to the polishing process of a wafer the dimension of that continues to decrease.SOLUTION: Provided is a chemical and mechanical polishing pad 10 which includes a polishing layer 20 having a polishing surface 14, that includes a first continuous non-volatile polymer phase 30 and a second non-volatile polymer phase 50. The first continuous non-volatile polymer phase includes plural cyclic concave parts 40, and the plural cyclic concave parts are filled with the second non-volatile polymer phase. The first continuous non-volatile polymer phase has a continuous bubble volume porosity of 6 vol% or less, the second non-volatile polymer phase has a continuous bubble volume porosity of 10 vol% or more, and the polishing surface is adapted to polish a base.SELECTED DRAWING: Figure 3 【課題】寸法が縮小し続けるウェーハの研磨プロセスに対応し、ケミカルメカニカル研磨パッドの作動性能範囲を拡大させる研磨層設計を提供する。【解決手段】研磨面１４を有する研磨層２０を含み、研磨層が第１の連続不揮発性ポリマー相３０及び第２の不揮発性ポリマー相５０を含み、第１の連続不揮発性ポリマー相が複数の周期性凹部４０を有し、複数の周期性凹部が第２の不揮発性ポリマー相によって埋められ、第１の連続不揮発性ポリマー相が≦６容量％の連続気泡気孔率を有し、第２の不揮発性ポリマー相が≧１０容量％の連続気泡気孔率を有し、研磨面が、基材を研磨するように適合されている、ケミカルメカニカル研磨パッド１０が提供される。【選択図】図３