SEMICONDUCTOR WAFER

• Main Authors: SAKAMOTO AKIRA, OGURI HIROSHI, TAGUCHI TOMOYA, ISHIKAWA YOSHITAKA, FUJII YOSHIMARO
• Format: Patent
• Language: English; Japanese
• Published: 09.02.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor wafer for obtaining a side face incident photodiode capable of detecting light of a comparatively short wavelength region.SOLUTION: A semiconductor wafer comprises: first conductivity type impurity added layers 7 each formed on a principal surface 1a side of each of a plurality of element formation regions 2; second conductivity type impurity added layers 9 each formed on the principal surface 1a side of each of the plurality of element formation regions 2; and electrodes 15, 17 which are formed on the principal surface 1a side of the semiconductor wafer and corresponding to impurity added layers 7, 9, respectively. The semiconductor wafer further comprises: grooves 11 each of which is formed at a boundary between neighboring element formation regions 2 out of the plurality of element formation regions 2 and extends from the principal surface 1a in a thickness direction of the semiconductor wafer, in which lateral faces 2a of the element formation regions are exposed on the grooves 11 and the lateral faces 2a of the element formation regions 2, which are exposed on the grooves 11 are etching surfaces; and insulation films 13 formed on the exposed lateral faces 2a of the element formation regions 2.SELECTED DRAWING: Figure 8 【課題】比較的短い波長領域の光を検出することが可能な側面入射型のフォトダイオードを得るための半導体ウエハを提供する。【解決手段】半導体ウエハは、複数の素子形成領域２それぞれの主面１ａ側に形成された第一導電型の不純物添加層７と、複数の素子形成領域２それぞれの主面１ａ側に形成された第二導電型の不純物添加層９と、半導体ウエハの主面１ａ側に、不純物添加層７，９毎に対応して形成された電極１５，１７と、を備える。複数の素子形成領域２のうち隣り合う素子形成領域２同士の境界となる位置に、主面１ａから半導体ウエハの厚み方向に延びる溝１１が形成されており、素子形成領域２の側面２ａが溝１１に露出し、溝１１に露出した素子形成領域２の側面２ａがエッチング面である。露出した素子形成領域２の側面２ａ上に、絶縁膜１３が形成されている。【選択図】図８