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Summary:PROBLEM TO BE SOLVED: To provide a sputtering target which is hardly broken during DC sputtering, even when a thickness is enlarged.SOLUTION: In a sputtering target, a perovskite type oxide which is a main component, obtained by molding raw material powder for the perovskite type oxide by an isotropic pressurization method of 100-500 MPa without containing a binder, and by cutting it into a prescribed size, has a crystal grain diameter of 11-15 μm, a deflective strength of 60 MPa or higher, an electric resistance value of 0.01-10 Ω-cm, a heat conductivity of 3-12 W/mK, and a thickness of 7-10 mm.SELECTED DRAWING: Figure 1 【課題】厚さを大きくしてもDCスパッタリング中に割れにくいスパッタリングターゲットの提供。【解決手段】ペロブスカイト型酸化物の原料粉末をバインダを含まずに100〜500MPaの等方圧加圧法で成形し、所定の大きさに切断した、主成分のペロブスカイト型酸化物の結晶粒子径が11〜15μmであり、抗折強度が60MPa以上で、電気抵抗値が0.01〜10Ωcmで、熱伝導率が3〜12W/mKで、厚さ7〜10mmのスパッタリングターゲット。【選択図】図1
Bibliography:Application Number: JP20150130135