SILICON CARBIDE SEMICONDUCTOR EPITAXIAL GROWTH APPARATUS

• Main Authors: FUKADA KEISUKE, HARA KAZUTO, ITO MASAHIKO, TSUCHIDA SHUICHI, KAMIHIGASHI HIDEYUKI, KAMATA ISAO, NAITO MASAMI, FUJIBAYASHI HIROAKI
• Format: Patent
• Language: English; Japanese
• Published: 12.01.2017
• Subjects: AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR; BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; CRYSTAL GROWTH; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; REFINING BY ZONE-MELTING OF MATERIAL; SEMICONDUCTOR DEVICES; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE; SINGLE-CRYSTAL-GROWTH; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL

PROBLEM TO BE SOLVED: To provide a SiC semiconductor epitaxial growth apparatus capable of forming an epitaxially grown SiC semiconductor layer to achieve highly controllable carrier concentration.SOLUTION: In a SiC semiconductor epitaxial growth apparatus, a wall surface out of first through third component parts 34a-34c, which composes first through fourth introduction ports 31a-31d is inclined on a growth chamber side and an opening width of each of the first through fourth introduction ports 31a-31d gradually increases with the decreasing distance from the growth chamber. This can increase an introduction range of various gases. Accordingly, various gases can be uniformly supplied to a surface of a SiC semiconductor substrate 70 substantially without causing an in-plane distribution.SELECTED DRAWING: Figure 1 【課題】エピタキシャル成長させるＳｉＣ半導体層のキャリア濃度を制御性良く形成可能なＳｉＣ半導体におけるエピタキシャル成長装置を提供する。【解決手段】第１〜第３構成部３４ａ〜３４ｃのうち、第１〜第４導入口３１ａ〜３１ｄを構成する壁面を成長室側において傾斜させ、第１〜第４導入口３１ａ〜３１ｄの開口幅を成長室側に向けて徐々に広げる。これにより、各種ガスの導入範囲を広げられる。したがって、ＳｉＣ半導体基板７０の表面にほぼ面内分布無く均一に各種ガスを供給することが可能となる。【選択図】図１