SILICON CARBIDE SEMICONDUCTOR EPITAXIAL GROWTH APPARATUS
PROBLEM TO BE SOLVED: To provide a SiC semiconductor epitaxial growth apparatus capable of forming an epitaxially grown SiC semiconductor layer to achieve highly controllable carrier concentration.SOLUTION: In a SiC semiconductor epitaxial growth apparatus, a wall surface out of first through third...
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Main Authors | , , , , , , , |
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Format | Patent |
Language | English Japanese |
Published |
12.01.2017
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide a SiC semiconductor epitaxial growth apparatus capable of forming an epitaxially grown SiC semiconductor layer to achieve highly controllable carrier concentration.SOLUTION: In a SiC semiconductor epitaxial growth apparatus, a wall surface out of first through third component parts 34a-34c, which composes first through fourth introduction ports 31a-31d is inclined on a growth chamber side and an opening width of each of the first through fourth introduction ports 31a-31d gradually increases with the decreasing distance from the growth chamber. This can increase an introduction range of various gases. Accordingly, various gases can be uniformly supplied to a surface of a SiC semiconductor substrate 70 substantially without causing an in-plane distribution.SELECTED DRAWING: Figure 1
【課題】エピタキシャル成長させるSiC半導体層のキャリア濃度を制御性良く形成可能なSiC半導体におけるエピタキシャル成長装置を提供する。【解決手段】第1〜第3構成部34a〜34cのうち、第1〜第4導入口31a〜31dを構成する壁面を成長室側において傾斜させ、第1〜第4導入口31a〜31dの開口幅を成長室側に向けて徐々に広げる。これにより、各種ガスの導入範囲を広げられる。したがって、SiC半導体基板70の表面にほぼ面内分布無く均一に各種ガスを供給することが可能となる。【選択図】図1 |
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Bibliography: | Application Number: JP20150126929 |