SEMICONDUCTOR DEVICE

• Main Author: ISHII KAZUFUMI
• Format: Patent
• Language: English; Japanese
• Published: 05.01.2017
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor device capable of composing one phase components by two semiconductor devices the same with each other in a 3-level inverter of T-type or ANPC (Active Neutral Point Clamped) I-type.SOLUTION: A semiconductor device according to the present invention is a semiconductor device used for a 3-level inverter of T-type or ANPC (Active Neutral Point Clamped) I-type and comprises an IGBT 2, an IGBT 3 and an IGBT 4 in which diodes are connected in an anti-parallel fashion and which have a self extinction function. The IGBT 2 and the IGBT 3 are connected in series and the IGBT 4 is insulated from the IGBT 2 and the IGBT 3.SELECTED DRAWING: Figure 1 【課題】本発明は、Ｔ−ｔｙｐｅまたはＡＮＰＣ形Ｉ−ｔｙｐｅの３レベルインバータにおいて、１相分を２個の同一の半導体装置で構成することが可能な半導体装置を提供することを目的とする。【解決手段】本発明による半導体装置は、Ｔ−ｔｙｐｅまたはＡＮＰＣ（Active Neutral Point Clamped）形Ｉ−ｔｙｐｅの３レベルインバータに用いられる半導体装置であって、ダイオードが逆並列に接続された自己消弧機能を有するＩＧＢＴ２、ＩＧＢＴ３、およびＩＧＢＴ４を備え、ＩＧＢＴ２およびＩＧＢＴ３は、互いに直列に接続され、ＩＧＢＴ４は、ＩＧＢＴ２およびＩＧＢＴ３とは絶縁されていることを特徴とする。【選択図】図１