METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

• Main Authors: HORIKOSHI KOTARO, SHOJI KENICHI, OCHI TAKANORI, HOTTA KATSUHIKO, TAKAHASHI TOSHIYUKI, MAEJIMA KIYOSHI
• Format: Patent
• Language: English; Japanese
• Published: 05.01.2017
• Subjects: APPARATUS SPECIALLY ADAPTED THEREFOR; BASIC ELECTRIC ELEMENTS; CINEMATOGRAPHY; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; ELECTROGRAPHY; HOLOGRAPHY; MATERIALS THEREFOR; ORIGINALS THEREFOR; PHOTOGRAPHY; PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES; PHYSICS; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To improve reliability of a semiconductor device.SOLUTION: A method for manufacturing a semiconductor device is provided, which includes steps of: preparing a semiconductor substrate 1S having a silicon nitride film on the back surface thereof; forming an interlayer insulation film having a via hole VH on a major surface of the semiconductor substrate; selectively forming a via fill PR2 in the via hole; then performing a wafer back surface cleaning 3 to expose a surface of the silicon nitride film formed on the back surface of the semiconductor substrate; and then forming a photoresist film PR3 comprising a chemically amplified resist on the interlayer insulation film and the via fill PR2 on the major surface of the semiconductor substrate. In the period after finishing the wafer back surface cleaning and starting the formation of the photoresist film, the semiconductor substrate is stored in an atmosphere having an ammonium ion concentration of 1000 μg/mor less.SELECTED DRAWING: Figure 2 【課題】半導体装置の信頼性を向上させる。【解決手段】半導体装置の製造方法は、裏面に窒化シリコン膜を有する半導体基板１Ｓを用意し、半導体基板の主面上にビアホールＶＨを有する層間絶縁膜を形成し、ビアホール内に選択的にビアフィルＰＲ２を形成する。次に、半導体基板の裏面に形成された窒化シリコン膜の表面を露出させるウエハ裏面洗浄３を実施した後、半導体基板の主面上の層間絶縁膜およびビアフィルＰＲ２上に化学増幅型レジストからなるフォトレジスト膜ＰＲ３を形成するが、その間、半導体基板をアンモニウムイオン濃度が１０００μｇ／ｍ3以下の雰囲気に保存する。【選択図】図２