SURFACE MODIFICATION DEVICE, BONDING SYSTEM, SURFACE MODIFICATION METHOD, PROGRAM, AND COMPUTER STORAGE MEDIUM

PROBLEM TO BE SOLVED: To properly modify a surface of a substrate on a surface modification device while suppressing damage of the surface modification device.SOLUTION: A surface modification device 30 includes: a lower part electrode 110, disposed in a processing container 100, on which wafers Wand...

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Bibliographic Details
Main Authors FURUYA HAJIME, OKAMOTO NORIHIKO
Format Patent
LanguageEnglish
Japanese
Published 28.12.2016
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Summary:PROBLEM TO BE SOLVED: To properly modify a surface of a substrate on a surface modification device while suppressing damage of the surface modification device.SOLUTION: A surface modification device 30 includes: a lower part electrode 110, disposed in a processing container 100, on which wafers Wand Ware placed; and an upper part electrode 140 disposed opposing the lower part electrode 110 in the processing container 100. The lower part electrode 110 is connected to a high frequency power source 137 for applying voltage for plasma generation and the upper part electrode 140 is grounded. An area of a lower surface of the upper part electrode 140 is larger than an area of an upper surface of the lower part electrode 110.SELECTED DRAWING: Figure 4 【課題】表面改質装置の損傷を抑制しつつ、当該表面改質装置において基板の表面を適切に改質する。【解決手段】表面改質装置30は、処理容器100内に配置され、ウェハWU、WLが載置される下部電極110と、処理容器100内において下部電極110に対向して配置される上部電極140と、を有する。下部電極110は、プラズマ生成用の電圧を印加するための高周波電源137に接続され、上部電極140は接地されている。上部電極140の下面の面積は、下部電極110の上面の面積より大きい。【選択図】図4
Bibliography:Application Number: JP20150111635