SEMICONDUCTOR LIGHT EMITTING ELEMENT AND SEMICONDUCTOR LIGHT EMITTING ELEMENT ARRAY
PROBLEM TO BE SOLVED: To inhibit a dark line which may be generated in a semiconductor light emitting element array including a plurality of semiconductor light emitting elements.SOLUTION: A semiconductor light emitting element used for a semiconductor light emitting element array, includes: and a s...
Saved in:
Main Authors | , |
---|---|
Format | Patent |
Language | English Japanese |
Published |
22.12.2016
|
Subjects | |
Online Access | Get full text |
Cover
Loading…
Summary: | PROBLEM TO BE SOLVED: To inhibit a dark line which may be generated in a semiconductor light emitting element array including a plurality of semiconductor light emitting elements.SOLUTION: A semiconductor light emitting element used for a semiconductor light emitting element array, includes: and a support substrate; and an optical semiconductor laminate which is an optical semiconductor laminate arranged on the support substrate, and has a structure where a first semiconductor layer having a first conductivity type, a luminescent active layer, and a second semiconductor layer having a second conductivity type different from the first conductivity type are sequentially laminated from the support substrate side, in which a groove with a height from the support substrate side to exceed at least the active layer is formed along an outer edge.SELECTED DRAWING: Figure 3-1
【課題】複数の半導体発光素子を含む半導体発光素子アレイにおいて生じうる暗線を抑制する。【解決手段】当該半導体発光素子アレイに用いられる半導体発光素子は、支持基板と、前記支持基板の上方に配置される光半導体積層であって、該支持基板側から、第1の導電型を有する第1の半導体層、発光性を有する活性層、および、該第1の導電型とは異なる第2の導電型を有する第2の半導体層、が順次積層する構造を有し、該支持基板側から少なくとも該活性層を超える高さを有する溝が、外縁に沿って設けられている、光半導体積層と、を含む。【選択図】 図3−1 |
---|---|
Bibliography: | Application Number: JP20150098880 |