SEMICONDUCTOR DEVICE

PROBLEM TO BE SOLVED: To provide a semiconductor device which inhibits cracks from occurring on an insulation film positioned below wiring while inhibiting increase of wiring resistance.SOLUTION: A semiconductor device 1 includes a semiconductor substrate 12. A passivation film 14 is formed on the s...

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Bibliographic Details
Main Author KAGEYAMA SATOSHI
Format Patent
LanguageEnglish
Japanese
Published 15.12.2016
Subjects
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Summary:PROBLEM TO BE SOLVED: To provide a semiconductor device which inhibits cracks from occurring on an insulation film positioned below wiring while inhibiting increase of wiring resistance.SOLUTION: A semiconductor device 1 includes a semiconductor substrate 12. A passivation film 14 is formed on the semiconductor substrate 12. Wiring 15 containing copper as a main component is formed on the passivation film 14. A barrier metal film 26 having higher rigidity than that of copper is disposed between the passivation film 14 and the wiring 15.SELECTED DRAWING: Figure 4 【課題】配線抵抗の増加を抑制しながら、配線の下方に位置する絶縁膜にクラックが生じるのを抑制できる半導体装置を提供する。【解決手段】半導体装置１は、半導体基板１２を含む。半導体基板１２上には、パッシベーション膜１４が形成されている。パッシベーション膜１４上には、銅を主成分とする配線１５が形成されている。パッシベーション膜１４と配線１５との間には、銅よりも高い剛性率を有するバリアメタル膜２６が介在している。【選択図】図４
Bibliography:Application Number: JP20150098318