PLASMA PROCESSING DEVICE AND PLASMA PROCESSING METHOD

• Main Authors: MATSUDA KOHEI, NISHIDA TOSHIAKI, KAWAMOTO NAOHIRO, FURUBAYASHI HITOSHI, MORI MASASHI
• Format: Patent
• Language: English; Japanese
• Published: 15.12.2016
• Subjects: BASIC ELECTRIC ELEMENTS; CHEMICAL SURFACE TREATMENT; CHEMISTRY; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; COATING MATERIAL WITH METALLIC MATERIAL; COATING METALLIC MATERIAL; DIFFUSION TREATMENT OF METALLIC MATERIAL; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL; METALLURGY; PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OFNEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMICBEAMS; SEMICONDUCTOR DEVICES; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION

PROBLEM TO BE SOLVED: To provide a plasma processing device and a plasma processing method for performing plasma processing while controlling a temperature and capable of suppressing a temporal change of plasma processing results.SOLUTION: A plasma processing device comprises a processing chamber in which a sample is subjected to plasma processing using plasma, a high-frequency power supply which supplies high-frequency power for generating plasma; and a sample stand arranged with a temperature sensor and a heater therein and mounted with the sample. The plasma processing device further includes a control device which determines whether to start plasma processing on the basis of a value of the temperature sensor and an output value of the heater.SELECTED DRAWING: Figure 1 【課題】本発明は、温度制御しながらプラズマ処理するプラズマ処理装置およびプラズマ処理方法において、プラズマ処理結果の経時変化を抑制できるプラズマ処理装置およびプラズマ処理方法を提供する。【解決手段】本発明は、プラズマを用いて試料がプラズマ処理される処理室と、前記プラズマを生成するための高周波電力を供給する高周波電源と、温度センサーおよびヒーターが内部に配置され前記試料が載置される試料台とを備えるプラズマ処理装置において、前記温度センサーの値と前記ヒーターの出力値に基づいて前記プラズマ処理の開始の判定を行う制御装置をさらに備えることを特徴とする。【選択図】図１