LIGHT-EMITTING DEVICE
PROBLEM TO BE SOLVED: To consider internal stress of a conductive film since a semiconductor device having the conductive film is affected by the internal stress.SOLUTION: In a semiconductor device having an n-channel type TFT provided over an insulating surface, an impurity element is implanted to...
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Main Author | |
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Format | Patent |
Language | English Japanese |
Published |
15.12.2016
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To consider internal stress of a conductive film since a semiconductor device having the conductive film is affected by the internal stress.SOLUTION: In a semiconductor device having an n-channel type TFT provided over an insulating surface, an impurity element is implanted to a conductive film, such as a gate electrode, so that a semiconductor film is subjected to tensile stress. In a semiconductor device having a p-channel type TFT provided over an insulating surface, an impurity is implanted to a conductive film, such as a gate electrode, so that a semiconductor film is subjected to compressive stress.SELECTED DRAWING: Figure 6
【課題】導電膜を有する半導体装置は、導電膜の内部応力の影響を受ける。内部応力について検討する。【解決手段】絶縁表面上に設けられたnチャネル型TFTを有する半導体装置は、半導体膜が引っ張り応力を受けるように、導電膜、例えばゲート電極に不純物元素が導入され、絶縁表面上に設けられたpチャネル型TFTを有する半導体装置は、半導体膜が圧縮応力を受けるように、導電膜、例えばゲート電極に不純物が導入されている。【選択図】図6 |
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Bibliography: | Application Number: JP20160163400 |