WRITE VOLTAGE GENERATION CIRCUIT AND MEMORY DEVICE

• Main Authors: MATSUI KATSUAKI, AKAHORI AKIRA
• Format: Patent
• Language: English; Japanese
• Published: 15.12.2016
• Subjects: INFORMATION STORAGE; PHYSICS; STATIC STORES

PURPOSE: To provide a write voltage generation circuit and memory device that enable high-speed writing of data to a memory cell without causing an increase in device scale.CONSTITUTION: A write voltage generation circuit includes: a power supply terminal that receives an external power supply voltage; a step-up circuit that generates a step-up voltage by stepping up an external power supply voltage; and a selector that selects either the external power supply voltage or step-up voltage, and outputs the selected voltage as a write voltage. The selector selects the external power supply voltage as the write voltage in the first-half of a write period in which data is written to a memory cell, and selects the step-up voltage as the write voltage in the second-half.SELECTED DRAWING: Figure 3 【目的】装置規模の増大を招くことなく、メモリセルに対して高速にデータの書き込みを行うことが可能となる書込電圧生成回路及びメモリ装置を提供することを目的とする。【構成】外部電源電圧を受ける電源端子と、外部電源電圧を昇圧して昇圧電圧を生成する昇圧回路と、外部電源電圧及び昇圧電圧のうちの一方を選択し、選択した方の電圧を書込電圧として出力するセレクタと、を有し、当該セレクタは、メモリセルにデータの書き込みを行う書込期間の前期では外部電源電圧を書込電圧として選択する一方、後期では昇圧電圧を書込電圧として選択する。【選択図】図３