ELECTROSTATIC CHUCK AND WAFER PROCESSING APPARATUS
PROBLEM TO BE SOLVED: To provide an electrostatic chuck capable of enhancing uniformity of in-plane temperature distribution of a processed object, and to provide a wafer processing apparatus.SOLUTION: An electrostatic chuck includes a ceramic dielectric substrate of polycrystalline ceramic sintered...
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Main Authors | , |
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Format | Patent |
Language | English Japanese |
Published |
08.12.2016
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Subjects | |
Online Access | Get full text |
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Summary: | PROBLEM TO BE SOLVED: To provide an electrostatic chuck capable of enhancing uniformity of in-plane temperature distribution of a processed object, and to provide a wafer processing apparatus.SOLUTION: An electrostatic chuck includes a ceramic dielectric substrate of polycrystalline ceramic sintered compact having a first principal surface for mounting a processed object, and a second principal surface on the opposite side of the first principal surface, an electrode layer provided on the ceramic dielectric substrate, a base plate provided on the second principal surface side and supporting the ceramic dielectric substrate, and a heater provided between the electrode layer and base plate. The base plate has a through hole penetrating the base plate, and an interconnection path passing a medium for adjusting the temperature of the processed object. When viewing in a direction perpendicular to the first principal surface, at least a part of the heater exists on the side of the through hole, viewing from a first part of the interconnection path closest to the through hole.SELECTED DRAWING: Figure 2
【課題】処理対象物の面内の温度分布の均一化を向上させることができる静電チャック及びウェーハ処理装置を提供することを目的とする。【解決手段】処理対象物を載置する第1主面と、第1主面とは反対側の第2主面と、を有し、多結晶セラミック焼結体であるセラミック誘電体基板と、セラミック誘電体基板に設けられた電極層と、第2主面の側に設けられセラミック誘電体基板を支持するベースプレートと、電極層とベースプレートとの間に設けられたヒータと、を備え、ベースプレートは、ベースプレートを貫通する貫通孔と、処理対象物の温度を調整する媒体を通す連通路と、を有し、第1主面に対して垂直な方向にみたときに、ヒータのうちの少なくとも一部は、貫通孔に最も近接した連通路の第1の部分からみて貫通孔の側に存在することを特徴とする静電チャックが提供される。【選択図】図2 |
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Bibliography: | Application Number: JP20160154132 |