SEMICONDUCTOR LAMINATE AND LIGHT RECEIVING ELEMENT

• Main Authors: AKITA KATSUSHI, ARIKATA SUGURU, KYONO TAKASHI
• Format: Patent
• Language: English; Japanese
• Published: 08.12.2016
• Subjects: BASIC ELECTRIC ELEMENTS; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR; ELECTRICITY; SEMICONDUCTOR DEVICES

PROBLEM TO BE SOLVED: To provide a semiconductor laminate and a light receiving element capable of improving sensitivity of a light receiving element that adopts a nip structure, and of reducing a dark current.SOLUTION: A semiconductor laminate 10 comprises: a substrate 20 formed of a group III-V compound semiconductor; a p-type layer 30 formed of a group III-V compound semiconductor, and whose conductivity type is p-type; a quantum well light-receiving layer 40 formed of a group III-V compound semiconductor; and an n-type layer 50 formed of a group III-V compound semiconductor, and whose conductivity type is n-type. The substrate 20, the p-type layer 30, the quantum well light-receiving layer 40 and the n-type layer 50 are laminated in this order. A concentration of a p-type impurity in the quantum well light-receiving layer 40 is equal to or less than 5×10cm.SELECTED DRAWING: Figure 1 【課題】ｎｉｐ構造を採用する受光素子の感度を向上させるとともに、暗電流を低減することが可能な半導体積層体および受光素子を提供する。【解決手段】半導体積層体１０は、ＩＩＩ−Ｖ族化合物半導体からなる基板２０と、ＩＩＩ−Ｖ族化合物半導体からなり、導電型がｐ型であるｐ型層３０と、ＩＩＩ−Ｖ族化合物半導体からなる量子井戸受光層４０と、ＩＩＩ−Ｖ族化合物半導体からなり、導電型がｎ型であるｎ型層５０と、を備える。基板２０、ｐ型層３０、量子井戸受光層４０およびｎ型層５０は、この順に積層される。そして、量子井戸受光層４０内におけるｐ型不純物の濃度は５×１０１５ｃｍ−３以下である。【選択図】図１